d s 11104 rev. g-3 1 of 1 MPSA05 / mpsa06 MPSA05 / mpsa06 npn small signal transistor features epitaxial planar die construction high transition frequency recommended for driver and low-power output stages characteristic symbol MPSA05 mpsa06 unit collector-base voltage MPSA05 mpsa06 v cbo 60 80 v collector-emitter voltage MPSA05 mpsa06 v ceo 60 80 v emitter-base voltage v ebo 4.0 v collector current (continuous) (note 1) i c 500 ma power dissipation (note 1) p d 625 mw thermal resistance, junction to ambient (note 1) r ja 200 k/w thermal resistance, junction to case r jc 83.3 k/w operating and storage temperature range t j ,t stg -55 to +150 c notes: 1. valid provided that leads at a distance of 2.0mm from case are kept at specified ambient temperature. 2. pulse test: pulse width 300s, duty cycle 2%. maximum ratings @ t a = 25 c unless otherwise specified case: to-92, plastic leads: solderable per mil-std-202, method 208 terminal connections: see diagram marking: type number weight: 0.18 grams (approx.) mechanical data d cbe hh bottom view e a b c g to-92 dim min max a 4.32 4.83 b 4.32 4.78 c 12.50 15.62 d 0.36 0.56 e 3.15 3.94 g 2.29 2.79 h 1.14 1.40 all dimensions in mm electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test conditions collector-emitter breakdown voltage MPSA05 mpsa06 v (br) ceo 60 80 v i c = 1.0ma, i b =0 emitter-base breakdown voltage v (br)ebo 4.0 v i e = 100a, i c = 0 collector cutoff current i ceo 0.1 a v ce = 60v, i b = 0 collector cutoff current MPSA05 mpsa06 i cbo 0.1 a v cb = 60v, i e = 0 v cb = 80v, i e = 0 dc current gain h fe 50 v ce = 1.0v, i c = 10ma v ce = 1.0v, i c = 100ma collector saturation voltage (note 2) v ce(sat) 0.25 v i c = 100ma, i b = 10ma base-emitter on-voltage v be(on) 1.2 v v ce = 1.0v, i c = 100ma gain bandwidth product t 100 mhz v ce = 2.0v, i c = 10ma, f = 100mhz
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